Emerging non-volatile memories (NVM), such as phase change memory (PCM), spin-transfer torque magnetoresistive random-access memory (STT-MRAM), and resistive random-access memory (RRAM), offer alternatives to conventional charge-based memories like Flash, SRAM, and DRAM. These NVM technologies store data as binary bits ('1' or '0') based on the high or low resistance states of their resistance-change layers. While the ability to read back stored data has potential applications in digital forensics, it also raises significant security concerns due to the risk of unauthorized data retrieval. Conductive Probe Atomic Force Microscopy (CP-AFM) has been widely used to characterize resistive switching effects in test samples. However, its application to commercial devices has not been thoroughly explored. This study aims to bridge this gap by investigating the feasibility of using CP-AFM for data retrieval from a commercial 4 Mbit RRAM device, employing front-side sample preparation techniques. Since the resistive change layers of this RRAM device are integrated during the backend process of CMOS fabrication, these layers are easily accessible using the front-side approach. With precise control of sample preparation and AFM setup, programmed data can be retrieved through CP-AFM scanning for potential applications in digital forensics. This study also highlights the potential vulnerabilities of this type of RRAM device. Furthermore, the challenges and limitations of using the CP-AFM technique for data retrieval are discussed.